Вход на сайт
Просмотр новости

Найдите то, что Вас интересует

Solid Solution of Metal Dopants in Semiconducting β-FeSi2 Matrix
Дата публикации: 13-08-2026 22:00:00

Publication date: 14 August 2026
Source: Key Engineering Materials Vol. 1062
Author(s): Sopheap Sam, Kosuke Yamazaki, Hiroshi Nakatsugawa
Metal dopants are commonly used to improve the transport properties of semiconducting iron silicide (β-FeSi2). However, the formation of metallic phases is sensitive to the addition of dopants, especially when they reach their solubility limits. Those secondary phases negatively impact on the transport properties of the materials. In this study, the strategy to investigate the metal solubility in β-FeSi2 matrix based on crystal structure transition, phase fraction, and microstructural evolution was established. The X-ray diffraction results show that the peak intensity of the metallic phases (ε-FeSi and α-Fe2Si5) increases with increasing doping level. For Mn-doped β-Fe1−xMnxSi2, phase fraction analysis shows that the semiconducting β phase remains the dominant phase (>95%) up to x = 0.08, whereas metallic phases become dominant for x > 0.08. Although the β-phase persists up to x = 0.08, local compositional analysis reveals that the solubility of Mn within the β-phase decreases with increasing formation of secondary phases. The local elemental distribution analysis shows that Mn and Co, respectively, have a solid solution limit of ~6.3±0.1 % and ~8.8±0.7 % in β-FeSi2. It is found that Mn and Co have higher solubility than Ni. Our study provides insights into the strategy to probe the solubility of dopants, which could be beneficial for performance enhancement in semiconducting iron silicide systems.


Основное содержимое страницы с новостью.

[1] L. Pauling, A.M. Soldate, The nature of the bonds in the iron silicide, FeSi, and related crystals, Acta Crystallogr. 1 (1948) 212–216.

DOI: 10.1107/S0365110X48000570

Google Scholar

[2] T. Sakata, Y. Sakai, H. Yoshino, H. Fujii, I. Nishida, Studies on the formation of FeSi2 from the FeSi-Fe2Si5 eutectic, J. Less Common Met. 61 (1978) 301–308.

DOI: 10.1016/0022-5088(78)90225-4

Google Scholar

[3] Y. Dusausoy, J. Protas, R. Wandji, B. Roques, Structure cristalline du disiliciure de fer, FeSi2β, Acta Crystallogr. Sect. B Struct. Crystallogr. Cryst. Chem. 27 (1971) 1209–1218.

DOI: 10.1107/S0567740871003765

Google Scholar

[4] I. Nishida, K. Masumoto, M. Okamoto, T. Kojima, Formation of FeSi2 from Sintered FeSi–Fe2Si5 Eutectic Alloy, Trans. Japan Inst. Met. 26 (1985) 369–374.

DOI: 10.2320/matertrans1960.26.369

Google Scholar

[5] S.J. Clark, H.M. Al-Allak, S. Brand, R.A. Abram, Structure and electronic properties of FeSi2, Phys. Rev. B 58 (1998) 10389–10393.

DOI: 10.1103/PhysRevB.58.10389

Google Scholar

[6] N. Promros, R. Baba, M. Takahara, T.M. Mostafa, P. Sittimart, M. Shaban, T. Yoshitake, Epitaxial growth of β-FeSi2 thin films on Si(111) substrates by radio frequency magnetron sputtering and their application to near-infrared photodetection, Jpn. J. Appl. Phys. 55 (2016) 06HC03.

DOI: 10.7567/JJAP.55.06HC03

Google Scholar

[7] C.. McKinty, A.. Kewell, J.. Sharpe, M.. Lourenço, T.. Butler, R. Valizadeh, J.. Colligon, K.. Reeson Kirkby, K.. Homewood, The optical properties of β-FeSi2 fabricated by ion beam assisted sputtering, Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. with Mater. Atoms 161–163 (2000) 922–925.

DOI: 10.1016/S0168-583X(99)00813-7

Google Scholar

[8] S. Sen, D. Acharya, P.K. Guha, P. Banerji, P. Pramanik, Comprehensive electrical characterization and theoretical analysis of Mn and As doped β-FeSi2 through DFT: A promise to rectification and photovoltaic applications, J. Appl. Phys. 134 (2023) 025702.

DOI: 10.1063/5.0149138

Google Scholar

[9] M. Hasan Ali, A.T.M. Saiful Islam, M.D. Haque, M. Ferdous Rahman, M. Khalid Hossain, N. Sultana, A.Z.M. Touhidul Islam, Numerical analysis of FeSi2 based solar cell with PEDOT:PSS hole transport layer, Mater. Today Commun. 34 (2023) 105387.

DOI: 10.1016/j.mtcomm.2023.105387

Google Scholar

[10] T. Saito, R. Asakawa, Production of (Fe,Co)Si2 and (Fe.Mn)Si2 Thermoelectric Materials by Spark Plasma Sintering, Crystals 14 (2023) 56.

DOI: 10.3390/cryst14010056

Google Scholar

[11] S. Sam, U. Farooq, M. Namba, K. Yamazaki, H. Nakatsugawa, Structure relations with transport properties in p-type thermoelectric materials: Iron silicides, J. Alloys Compd. 989 (2024) 174367.

DOI: 10.1016/j.jallcom.2024.174367

Google Scholar

[12] H. Inoue, T. Kobayashi, M. Kato, S. Yoneda, A Low-Cost Production Method of FeSi2 Power Generation Thermoelectric Modules, J. Electron. Mater. 45 (2016) 1767–1771.

DOI: 10.1007/s11664-015-4208-4

Google Scholar

[13] J. Cheng, L. Gan, J. Zhang, J. Xi, L. Xi, J. Yang, T. Deng, P. Qiu, X. Shi, L. Chen, Thermoelectric properties of heavily Co-doped β-FeSi2, J. Mater. Sci. Technol. 187 (2024) 248–257.

DOI: 10.1016/j.jmst.2023.11.039

Google Scholar

[14] S. Sam, U. Farooq, R. Oshita, H. Nakatsugawa, Insight into phase stability and thermoelectric properties of semiconducting iron silicides with manganese substitution: β-Fe1−xMnxSi2(0≤x≤0.05), J. Phys. Chem. Solids 194 (2024) 112224.

DOI: 10.1016/j.jpcs.2024.112224

Google Scholar

[15] Z. He, D. Platzek, C. Stiewe, H. Chen, G. Karpinski, E. Müller, Thermoelectric properties of hot-pressed Al- and Co-doped iron disilicide materials, J. Alloys Compd. 438 (2007) 303–309.

DOI: 10.1016/j.jallcom.2006.08.045

Google Scholar

[16] H.Y. Chen, X.B. Zhao, C. Stiewe, D. Platzek, E. Mueller, Microstructures and thermoelectric properties of Co-doped iron disilicides prepared by rapid solidification and hot pressing, J. Alloys Compd. 433 (2007) 338–344.

DOI: 10.1016/j.jallcom.2006.06.080

Google Scholar

[17] X. Du, P. Hu, T. Mao, Q. Song, P. Qiu, X. Shi, L. Chen, Ru Alloying Induced Enhanced Thermoelectric Performance in FeSi2 -Based Compounds, ACS Appl. Mater. Interfaces 11 (2019) 32151–32158.

DOI: 10.1021/acsami.9b10648

Google Scholar

[18] S. Sam, H. Nakatsugawa, Y. Okamoto, Optimization of Co additive amount to improve thermoelectric properties of β-FeSi2, Jpn. J. Appl. Phys. 61 (2022) 111002.

DOI: 10.35848/1347-4065/ac96b7

Google Scholar

[19] J. Tani, H. Kido, Electrical properties of Co-doped and Ni-doped β-FeSi2, J. Appl. Phys. 84 (1998) 1408–1411.

DOI: 10.1063/1.368174

Google Scholar

[20] S. Sam, S. Odagawa, H. Nakatsugawa, Y. Okamoto, Effect of Ni Substitution on Thermoelectric Properties of Bulk β-Fe1−xNixSi2 (0 ≤ x ≤ 0.03), Materials. 16 (2023) 927.

DOI: 10.3390/ma16030927

Google Scholar

[21] S. Sam, H. Nakatsugawa, Y. Okamoto, Improved thermoelectric performance of Co-doped β-FeSi2 by Ni substitution, Mater. Adv. 4 (2023) 2821–2830.

DOI: 10.1039/D3MA00153A

Google Scholar

[22] M. Ito, H. Nagai, E. Oda, S. Katsuyama, K. Majima, Effects of P doping on the thermoelectric properties of β-FeSi2, J. Appl. Phys. 91 (2002) 2138–2142.

DOI: 10.1063/1.1436302

Google Scholar

[23] F. Dąbrowski, Ł. Ciupiński, J. Zdunek, J. Kruszewski, R. Zybała, A. Michalski, K. Jan Kurzydłowski, Microstructure and thermoelectric properties of p and n type doped β-FeSi2 fabricated by mechanical alloying and pulse plasma sintering, Mater. Today Proc. 8 (2019) 531–539.

DOI: 10.1016/j.matpr.2019.02.050

Google Scholar

[24] M. Komabayashi, K.H. Ido, Effects of Some Additives on Thermoelectric Properties of FeSi2 Thin Films, Jpn. J. Appl. Phys. 30 (1991) 331.

DOI: 10.1143/JJAP.30.331

Google Scholar

[25] J. Tani, H. Kido, Thermoelectric properties of Pt-doped β-FeSi2, J. Appl. Phys. 88 (2000) 5810–5813.

DOI: 10.1063/1.1322597

Google Scholar

[26] P. Qiu, J. Cheng, J. Chai, X. Du, X. Xia, C. Ming, C. Zhu, J. Yang, Y. Sun, F. Xu, X. Shi, L. Chen, Exceptionally Heavy Doping Boosts the Performance of Iron Silicide for Refractory Thermoelectrics, Adv. Energy Mater. 12 (2022) 2200247.

DOI: 10.1002/aenm.202200247

Google Scholar

[27] S.W. Kim, M.K. Cho, Y. Mishima, D.C. Choi, High temperature thermoelectric properties of p- and n-type β-FeSi2 with some dopants, Intermetallics 11 (2003) 399–405.

DOI: 10.1016/S0966-9795(03)00020-7

Google Scholar

[28] S. Katsuyama, H. Matsushima, M. Ito, Effect of substitution for Ni by Co and/or Cu on the thermoelectric properties of half-Heusler ZrNiSn, J. Alloys Compd. 385 (2004) 232–237.

DOI: 10.1016/j.jallcom.2004.02.061

Google Scholar

[29] X. Du, P. Qiu, J. Chai, T. Mao, P. Hu, J. Yang, Y.-Y. Sun, X. Shi, L. Chen, Doubled Thermoelectric Figure of Merit in p-Type β-FeSi2 via Synergistically Optimizing Electrical and Thermal Transports, ACS Appl. Mater. Interfaces 12 (2020) 12901–12909.

DOI: 10.1021/acsami.0c00321

Google Scholar

[30] Y. Kimura, M. Yamada, Y.W. Chai, Thermoelectric Properties of Nearly Single-Phase β-FeSi2 Alloys Fabricated by Gas-Atomized Powder Sintering, Mater. Trans. 60 (2019) 652–661.

DOI: 10.2320/matertrans.MB201805

Google Scholar

[31] J. Tani, H. Kido, Thermoelectric Properties of Mn-Doped FeSi2 Fabricated by Spark Plasma Sintering., J. Ceram. Soc. Japan 109 (2001) 557–560.

DOI: 10.2109/jcersj.109.1270_557

Google Scholar

[32] F. Dąbrowski, Ciupiński, J. Zdunek, W. Chromiński, M. Kruszewski, R. Zybała, A. Michalski, K.J. Kurzydłowski, Microstructure and Thermoelectric Properties of Doped FeSi2 with Addition of B4C Nonoparticles, Arch. Metall. Mater. 66 (2021) 1157–1162.

DOI: 10.24425/amm.2021.136436

Google Scholar

[33] M. Ito, H. Nagai, D. Harimoto, S. Katsuyama, K. Majima, Effects of Cu addition on the thermoelectric properties of hot-pressed β-FeSi2 with SiC dispersion, J. Alloys Compd. 322 (2001) 226–232.

DOI: 10.1016/S0925-8388(01)01171-9

Google Scholar

[34] M. Ito, H. Nagai, T. Tanaka, S. Katsuyama, K. Majima, Thermoelectric performance of n-type and p-type β-FeSi2 prepared by pressureless sintering with Cu addition, J. Alloys Compd. 319 (2001) 303–311.

DOI: 10.1016/S0925-8388(01)00920-3

Google Scholar

[35] M. Ito, T. Tanaka, S. Hara, Thermoelectric properties of β-FeSi2 with electrically insulating SiO2 and conductive TiO dispersion by mechanical alloying, J. Appl. Phys. 95 (2004) 6209–6215.

DOI: 10.1063/1.1710725

Google Scholar

[36] T. Kojima, K. Masumoto, M.. Okamoto, I. Nishida, Formation of β-FeSi2 from the sintered eutectic alloy FeSiFe2Si5 doped with cobalt, J. Less Common Met. 159 (1990) 299–305.

DOI: 10.1016/0022-5088(90)90157-F

Google Scholar

[37] H. Nagai, I. Maeda, S. Katsuyama, K. Majima, The Effect of Co and Ni Doping on the Thermoelectric Properties of Sintered FeSi2, J. Japan Soc. Powder Powder Metall. 41 (1994) 560–564.

DOI: 10.2497/jjspm.41.560

Google Scholar

[38] M. Ohtaki, D. Ogura, K. Eguchi, H. Arai, Thermoelectric Properties of Sintered FeSi2 with Microstructural Modification, Chem. Lett. 22 (1993) 1067–1070.

DOI: 10.1246/cl.1993.1067

Google Scholar

[39] X. Qu, S. Lü, J. Hu, Q. Meng, Microstructure and thermoelectric properties of β-FeSi2 ceramics fabricated by hot-pressing and spark plasma sintering, J. Alloys Compd. 509 (2011) 10217–10221.

DOI: 10.1016/j.jallcom.2011.08.070

Google Scholar

[40] K. Nogi, T. Kita, Rapid production of β-FeSi2 by spark-plasma sintering, J. Mater. Sci. 35 (2000) 5845–5849. https://doi.org/.

DOI: 10.1023/A:1026752206864

Google Scholar

[41] J. Tani, H. Kido, Mechanism of electrical conduction of Mn-doped β-FeSi2, J. Appl. Phys. 86 (1999) 464–467.

DOI: 10.1063/1.370753

Google Scholar

[42] S. Sam, K. Yamazaki, H. Nakatsugawa, Investigation of phase fraction in α-Fe2Si5, ε-FeSi, and β-FeSi2 thermoelectric materials doped with Co and Ni, Solid State Commun. 371 (2023) 115287.

DOI: 10.1016/j.ssc.2023.115287

Google Scholar

[43] M. Shibuya, M. Kawata, Y. Shinohara, M. Ohyanagi, Eco-Fabrication Process and Thermoelectric Properties of β-FeSi2, Trans. Mater. Res. Soc. Japan 40 (2015) 219–222.

DOI: 10.14723/tmrsj.40.219

Google Scholar

[44] M. Ito, T. Tada, S. Katsuyama, Thermoelectric properties of Fe0.98Co0.02Si2 with ZrO2 and rare-earth oxide dispersion by mechanical alloying, J. Alloys Compd. 350 (2003) 296–302.

DOI: 10.1016/S0925-8388(02)00964-7

Google Scholar

[45] M. Ito, T. Tada, S. Hara, Effects of Y2O3 and Y Addition on Thermoelectric Properties of FeSi2 Synthesized by Mechanical Alloying and Hot Pressing, Mater. Trans. 45 (2004) 2916–2921.

DOI: 10.2320/matertrans.45.2916

Google Scholar

Схожие новости

#Наименование новостиТональностьИнформативностьДата публикации
1Elastic Anomalies in the 2D Van Der Waals Ti3C2Tx MXene: Possible Sliding Ferroelectricity and Ordering of Intercalated Halides011.2613-08-2026
2Layered crystal embeds atom-thin iron selenide can improve waste heat conversion5817-07-2026
3Design and Manufacturing of Defect-Free PumpCasings: A Numerical and Experimental Approach011.713-08-2026
4Atomic 'domino effect' found to drive phase changes in a two-dimensional crystal0706-07-2026
5Striped or checkered? Magnetic field influences competing electronic patterns in a graphene-like quantum material07.2623-07-2026
6Spontaneous current loops in a kagome metal point to hidden quantum order0702-07-2026
7New imaging method reveals how electric fields reshape ferroelectric materials5713-07-2026
8Matériaux antiferromagnétiques octaédriques : complexité émergente sous champ magnétique0505-03-2026
9Demonstration of Spontaneous Magnon Coherence at Room Temperature – New Opportunities for Future Technologies6814-07-2026
10Researchers develop a new predictive model for designing 2D perovskites5702-07-2026

Классификация: Наука. Схожих патентов: 0. Схожих новостей: 10. Тональность: 0. Информативность: 7. Источник: www.scientific.net.